The memstar XeF2 vapor release etching allows dry isotropic etching of Si at μm/min etch rates.

Aluminium, SiO2 or photoresist can be used as a mask with close to infinite selectivity. The machine is extremely simple to use and it allows straightforward processing of chips or wafers. Release structures and deep etch can be achieved.

Etch Materials: Si, Ge, Mo

Etch rate: from 1-10um/min (pattern and process dependent)

Process range: 1-10Torr

Roughness etched area [rms]: < 10nm

4inch wafer homogeneity [(max-min)/avg] : better than 5%